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Title: Variation of the in-plane penetration depth lambda(ab) as a function of doping in La2-xSrxCuO4+/-delta thin films on SrTiO3: Implications for the overdoped state
Authors: Locquet, Jean-Pierre ×
Jaccard, Y
Cretton, A
Williams, EJ
Arrouy, F
Machler, E
Schneider, T
Fischer, O
Martinoli, P #
Issue Date: 1996
Publisher: AMERICAN PHYSICAL SOC
Series Title: Physical review. B, Condensed matter vol:54 issue:10 pages:7481-7488
Conference: date:UNIV NEUCHATEL,INST PHYS,CH-2000 NEUCHATEL,SWITZERLAND; UNIV GENEVA,DEPT PHYS MAT CONDENSEE,CH-1211 GENEVA,SWITZERLAND; UNIV ZURICH,INST INORGAN CHEM,CH-8057 ZURICH,SWITZERLAND
Abstract: Normal-state properties, such as the resistivity rho(ab) and the Hall coefficient R(H), structural properties, such as the c axis and in-plane lattice parameters, and superconductive properties, such as the critical temperature T-c, the penetration depth lambda(ab), and the thermal activation energy for flux flow Delta U, are reported for c-axis La2-xSrxCuO4+/-delta films. These parameters have been measured as a function of doping in the range from heavily underdoped to heavily overdoped. The structural data indicate a 0.3% compression of the c-axis parameter and a corresponding 0.3% expansion of the in-plane lattice parameters as compared to bulk values, which explains the overall reduced critical temperature of these thin films. As the dopant content is increased, maximum values for T-c, Delta U, and lambda(ab)(-1) are observed close to optimum doping, while R(H) and rho(ab) decrease monotonically.
ISSN: 0163-1829
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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