Journal of alloys and compounds vol:251 issue:1-2 pages:118-122
date:IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND; UNIV GENEVA,DEPT PHYS MAT CONDENSEE,CH-1211 GENEVA,SWITZERLAND
The growth and subsequent electrochemical oxygen intercalation of c-axis Ln(2)CuO(4+delta) thin films on substrates with different lattice mismatch [SrTiO3 (001) (+3.03%), NdGaO3 (001) (+1.90%), LaAlO3 (001) (-0.05%) and SrLaAlO4 (001) (-0.95%) substrates] are compared. The films grown on the different substrates can all be oxidized electrochemically,, but their structural and transport properties differ vastly. The results can roughly be divided into two categories, i.e,, those of films grown with a compressive or a tensile lattice mismatch where the former have a larger c-asis lattice parameter and better transport properties.