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Title: Epitaxially induced defects in Sr- and O-doped La2CuO4 thin films is grown by MBE: Implications for transport properties
Authors: Locquet, Jean-Pierre ×
Williams, EJ #
Issue Date: 1997
Publisher: POLISH ACAD SCIENCES INST PHYSICS
Series Title: Acta physica Polonica A vol:92 issue:1 pages:69-84
Conference: date:UNIV GENEVA,DEPT PHYS MAT CONDENSEE,CH-1211 GENEVA,SWITZERLAND
Abstract: In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T-c thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.
ISSN: 0587-4246
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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