Acta physica Polonica A vol:92 issue:1 pages:69-84
date:UNIV GENEVA,DEPT PHYS MAT CONDENSEE,CH-1211 GENEVA,SWITZERLAND
In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T-c thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.