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Title: Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 mu m laser applications studied by magnetophotoluminescence
Authors: Cornet, C ×
Levallois, C
Caroff, P
Folliot, H
Labbe, C
Even, J
Le Corre, A
Loualiche, S
Hayne, Manus
Moshchalkov, Victor #
Issue Date: Dec-2005
Publisher: AMER INST PHYSICS
Series Title: Applied Physics Letters vol:87 issue:23
Conference: date:CNRS, UMR 6082, FOTON, INSA,LENS, F-35043 Rennes, France; Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, Pulsed Field Grp, B-3001 Louvain, Belgium
Abstract: We have used magnetophotoluminescence to study the impact of different capping layer material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on lateral confinement in InAs/InP quantum dots (QDs) grown on (311)B orientated substrates. Exciton effective masses, Bohr radii, and binding energies are measured for these samples. Conclusions regarding the strength of the lateral confinement in the different samples are supported by photoluminescence at high excitation power. Contrary to theoretical predictions, InAs QDs in quaternary alloy are found to have better confinement properties than InAs/InP QDs. This is attributed to a lack of lateral intermixing with the quaternary alloy, which is present when InP is used to (partially) cap the dots. The implications of the results for reducing the temperature sensitivity of QD lasers are discussed. (c) 2005 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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