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Title: Epitaxiall growth of cubic and hexagonal GaN films on GaAs(001) substrates by MBE
Authors: Liu, HF ×
Chen, H
Li, ZQ
Wan, L
Huang, Q
Zhou, JM
Luo, Yiwen
Han, YJ #
Issue Date: Jun-2000
Publisher: Chinese physical soc
Series Title: Acta physica sinica vol:49 issue:6 pages:1132-1135
Abstract: GaN films of about 300 nm were grown on GaAs(001) substrates by molecular beam epitaxy (MBE). X-ray double-crystal diffraction and room-temperature photoluminescence measurements show that the films grown on nitridized GaAs nucleation layer are pure cubic GaN while the films grown on nitridized AlAs nucleation layer are pure hexagonal GaN. The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different nucleation layers.
ISSN: 1000-3290
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Mechanical Metallurgy Section (-)
× corresponding author
# (joint) last author

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