Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy
Chen, H × Li, ZQ Liu, HF Wan, L Zhang, MH Huang, Q Zhou, JM Luo, Yiwen Han, YJ Tao, K Yang, N #
Elsevier science bv
Journal of Crystal Growth vol:210 issue:4 pages:811-814
Two kinds of GaN samples were grown on GaAs(0 0 1) substrates. One is grown on nitridized GaAs surface, the other is grown on nitridized AlAs buffer GaAs substrate. X-ray diffraction and photoluminescence measurements find that the GaN sample directly grown on GaAs substrate is pure cubic phase and those grown on AlAs buffer is pure hexagonal phase. The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different buffer layers. (C) 2000 Elsevier Science B.V. All rights reserved.