Proceedings 26th IEEE Photovoltaic Specialists Conference; 29 September - 3 October 1997; Anaheim, CA, USA., Date: 1997/09/29 - 1997/10/03, Location: CA, ANAHEIM
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997
Author:
Keywords:
Science & Technology, Technology, Physical Sciences, Energy & Fuels, Engineering, Electrical & Electronic, Materials Science, Ceramics, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Optics, Engineering, Materials Science
Abstract:
The surface passivation properties of both direct and remote plasma nitrides are compared to a thin thermal oxide, grown at high temperatures. Internal quantum efficiency measurements prove that the surface recombination velocities are lowest in case of the remote plasma nitride layer. The extracted values of the surface recombination velocity are as low as 1.5×103 cm/s for the remote plasma nitride, whereas the value for the thermal oxide is twice as high, comparable to the value obtained for the direct plasma nitride. SiGe-cells show the same tendency, although the blue response is lower in absolute value.