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Materials Research Letters

Publication date: 2017-01-01
Pages: 29 - 34
Publisher: Taylor & Francis Open

Author:

Feng, Ruixing
Kremer, Felipe ; Sprouster, David J ; Mirzaei, Sahar ; Decoster, Stefan ; Glover, Chris J ; Medling, Scott A ; Hansen, John Lundsgaard ; Nylandsted-Larsen, Arne ; Russo, Salvy P ; Ridgway, Mark C

Keywords:

Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, SiGe, C plus In co-doping, X-ray absorption fine structure, Hall Effect, CARBON INCORPORATION, BORON-DIFFUSION, LOCAL GEOMETRY, BAND-GAP, INDIUM, SI1-X-YGEXCY, SILICON, SIGE, SUPPRESSION, GERMANIUM, 4016 Materials engineering, 4019 Resources engineering and extractive metallurgy

Abstract:

© 2016 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.