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Keywords:

photo resist, extension, germanium, strip, Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, PHOTO RESIST, EXTENSION, GERMANIUM, STRIP, 0204 Condensed Matter Physics, 0299 Other Physical Sciences, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 4016 Materials engineering

Abstract:

Arsenic implanted 248 nm DUV photoresist films were characterized by ToF-SIMS and XPS analysis methods. The effect of the implant dose and energy on the formation of the crust layer on top of the bulk photoresist was studied. The crust layer thickness was found to be dependent on the implant energy and dose. The elemental and chemical changes induced by various implant doses and implant energies were investigated. Emphasis was put on the effect of the aging time on the composition of the ion implanted photoresist. (C) 2010 Elsevier B.V. All rights reserved.