IEEE Electron Device Letters

Publication date: 2012-01
Volume: 33 Pages: 438 - 440
ISSN: 0741-3106, 1558-0563
DOI: 10.1109/LED.2011.2181318
Publisher: Institute of Electrical and Electronics Engineers

Author:

Sun, Xiao
Cui, Sharon ; Alian, AliReza ; Brammertz, Guy ; Merckling, Clement ; Lin, Dennis ; Ma, TP

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, Charge trapping, InGaAs, MOSFET, oxide trap, Si, spatial distribution, stress, SI-SIO2 INTERFACE, DENSITY, NOISE, Applied Physics, 0906 Electrical and Electronic Engineering