Applied Physics Letters

Publication date: 2007-09
Volume: 91
ISSN: 0003-6951, 1077-3118
DOI: 10.1063/1.2783262
Publisher: American Institute of Physics

Author:

Ye, Z
Lu, J ; Zhang, Y ; Zeng, Y ; Chen, L ; Zhuge, F ; Yuan, G ; Zhu, L ; Huang, J ; Zhao, B

Keywords:

p-type zno, thin-films, emission, 09 Engineering, 02 Physical Sciences, Applied Physics

Abstract:

ZnO homojunction light-emitting diodes (LEDs), comprised of N-Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3 V. The electroluminescence (EL) bands at 110 K consisted of a near-band-edge emission at 3.18 eV and a deep level emission at 2.58 eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer.