Applied Physics Letters

Publication date: 2006-09
Volume: 89
ISSN: 0003-6951, 1077-3118
DOI: 10.1063/1.2354034
Publisher: American Institute of Physics


Lu, J
Zhang, Y ; Ye, Z ; Zeng, Y ; Zhu, L ; Huang, J ; Wang, L ; Yuan, J ; Zhao, B


deposition, 09 Engineering, 02 Physical Sciences, Applied Physics


Li-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04x10(17) cm(-3) at an optimal Li content of 0.6 at. %, whereas ZnO exhibited n-type conductivity in a conventional O-2 growth atmosphere. At a Li content of more than 1.2 at. % only high-resistivity ZnO was obtained. The amount of Li introduced into ZnO and the relative concentrations of such defects as Li substitutions and interstitials could play an important role in determining the conductivity of films. (c) 2006 American Institute of Physics.