Applied Physics Letters

Publication date: 2006-07
Volume: 89
ISSN: 0003-6951, 1077-3118
DOI: 10.1063/1.2245221
Publisher: American Institute of Physics

Author:

Lu, J
Ye, Z ; Yuan, G ; Zeng, Yujia ; Zhuge, F ; Zhu, L ; Zhao, B ; Zhang, S

Keywords:

p-type zno, light-emitting diode, n homojunctions, ohmic contacts, thin-films, conductivity, fabrication, junctions, 09 Engineering, 02 Physical Sciences, Applied Physics

Abstract:

Electrical characteristics have been studied for ZnO p-n and p-i-n homojunctions, with optimization of device structures for improved performance. Capacitance-voltage measurements confirm the formation of abrupt junctions. The current-voltage characteristics exhibit their inherent electrical rectification behavior. The p-ZnO:(N,Al)/n-ZnO:Al homojunctions fabricated on sapphire substrates combining with the intrinsic ZnO buffer layer have acceptable p-n diode characteristics, with the forward turn-on voltage of 1.4 V and the reverse breakdown voltage of 5.3 V. By introduction of an intrinsic (Zn,Cd)O layer, the resultant p-ZnO:(N,Al)/i-(Zn,Cd)O/n-ZnO:Al homojunction exhibits a high reverse breakdown voltage of similar to 18 V.