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Applied Physics Letters

Publication date: 2006-06
Volume: 88
ISSN: 0003-6951, 1077-3118
DOI: 10.1063/1.2217165
Publisher: American Institute of Physics

Author:

Zeng, Yujia
Ye, Z ; Xu, W ; Lu, J ; Zhu, L ; Zhao, B ; Che, Y ; Zhang, S

Keywords:

vapor-phase epitaxy, zinc-oxide, n-type, excitation spectroscopy, conductivity, dependence, hydrogen, defects, dopant, 09 Engineering, 02 Physical Sciences, Applied Physics

Abstract:

We report on intrinsic p-type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7 Omega cm, a Hall mobility of 2.6 cm(2)/V s, and a hole concentration of 1.88 x 10(17) cm(-3). The oxygen concentration is increased in the intrinsic p-type ZnO, compared with the n-type layer. Two acceptor states, with the energy levels located at 160 and 270 meV above the valence band maximum, are identified by temperature-dependent photoluminescence. The origin of intrinsic p-type behavior has been ascribed to the formation of zinc vacancy and some complex acceptor center.