Selective epitaxial growth of high-P Si:P for dource/drain  formation in advanced Si nFETs

Rosseel, Erik; dhayalan,; Hikavyy, Andriy; Loo, Roger; Profijt, Harald; Kohen, David; Kubicek, Stefan; Chiarella, Thomas; Yu, Hao; Horiguchi, Naoto; Mocuta, Dan; Barla, Kathy; Thean, Aaron; Bartlett, Gregory; Margetis, Joe; Bhargava, Nupur; Tolle, John

PRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices, Date: 2016/01/01 - 2016/01/10, Location: Honolulu, HI USA

Publication date: 2016-01-01

Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

Author:

Rosseel, Erik

dhayalan, ; Hikavyy, Andriy ; Loo, Roger ; Profijt, Harald ; Kohen, David ; Kubicek, Stefan ; Chiarella, Thomas ; Yu, Hao ; Horiguchi, Naoto ; Mocuta, Dan ; Barla, Kathy ; Thean, Aaron ; Bartlett, Gregory ; Margetis, Joe ; Bhargava, Nupur ; Tolle, John