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Journal of Micro-Nanolithography, MEMS, and MOEMS

Publication date: 2017-01
Volume: 16 Pages: 023506 - 023506
ISSN: 1932-5150, 1932-5134
DOI: 10.1117/1.JMM.16.2.023506
Publisher: SPIE - International Society for Optical Engineering


Doise, Jan
Bekaert, Joost ; Chan, Boon Teik ; Hori, Masafumi ; Gronheid, Roel


block copolymer, directed self-assembly, via patterning, graphoepitaxy, logic layout, Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Optics, Engineering, Science & Technology - Other Topics, Materials Science, BLOCK-COPOLYMERS, 0205 Optical Physics, 0906 Electrical and Electronic Engineering


© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE). Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.